Dependence of the critical temperature on the carrier density per layer. In this work, data points were obtained on a total of five samples (OP-1, OP-2, OP-3, IP-1 and IP-2). Error bars reflect the carrier density variation due to the density gradient along the Hall bar (Supplementary Section 2 ). Data from literature on bulk chemically doped samples and single- and double-sided EDLTs in refs. 22 , 28 are included as well. The inset shows density-dependent data for sample IP-2 together with a fit to the scaling law {T}_{{{rm{C}}}}0propto {({n}_{rm{s}}-{n}_{{{{rm{Q}}}}})}^{zv} (see also ref. 28 ). V G refers here to the backgate voltage.
