Illustration from Scientific Research

Citation
Illustration of the energy band diagram for charge injection during program operation in b top contacted memory cells, the tunneling pathways through contact region and semiconductor channel are compared (M: metal contact, CH: channel, CA: contact affected area). When considering the band bending in semiconductor channel ( s ) under field modulation, the hole tunneling barrier ( tB h ) though the valance band of hBN is apparently reduced from the initial value ( tB0 h ). If compared to the field emission (indicated by red arrow) in edge contact, rich trap states under contact affected area (CA) in top contact configuration lead to thermionic process governed charge emission at contact (blue arrow).
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