Scatter Plot from Scientific Research

Open access visualization of Scatter Plot, Regression Plot, Temperature-Dependent Charge Injection, Memory Cell, Charge Injection Efficiency
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DOI: 10.1038/s41467-023-41363-x

DOI

Temperature-dependent charge injection behavior of edge and top contacted memory cell. The charge injection efficiency is reflected by the threshold shift under ultrafast (10 ns) P/E operation, in which the pulse amplitude are respectively -15 V and 20 V for program and erase. Their distinct temperature dependence is indicated by the dash guidelines.

#Scatter Plot#Regression Plot#Temperature-Dependent Charge Injection#Memory Cell#Charge Injection Efficiency#Threshold Shift#P/E Operation#Pulse Amplitude

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