Line Plot from Scientific Research

P/E behavior of >20 memory cells under ultrafast electric pulse (10 ns for program, 100 ns for erase) and varying operation voltage. The operation voltage was normalized according to the thickness of tunneling hBN to reflect the electric field strength at the tunneling layer. On the right panel of f, the cumulative probability is counted if an ON/OFF ratio ≥10 2 is attained by the applied ultrafast P/E pulses.

DOI