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Field-effect lateral transport in the 3L (measured at 80 mK) and 6L devices in logarithmic scale. Subthreshold p-type conduction was achieved in both samples. Note a lower subthreshold slope in the 3L with respect to the 6L device (Supplementary Note 2 ). The inset highlights the onset of p-type conduction in the 3L device (VON3L≈-6.4 V ).
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