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Energy diagram describing the generation and decay of S1 and CT states as well as the interplays between each energy state in low-offset OSCs. kf,exc, kdiff,exc, and kdiss,exc are the rate constants of the decay, diffusion, and dissociation of excitons, respectively. kf,CT and kdiss,CT are the rate constants of CT decay and CT dissociation, respectively. kref is the reformation rate constant, and B the rate of encounter of free carriers. The singlet excitons generated in the bulk diffuse to the donor:acceptor interface and dissociate to form CT states, and subsequently form free charges (CS) via CT dissociation. The CT and S1 states can be repopulated upon the encounter of free charges and CT-S1 reformation, respectively. Losses can occur through four channels: 1) via S1 decay during the exciton diffusion in the bulk, 2) via S1 decay during S1 dissociation at the donor:acceptor interface, 3) via the decay of reformed S1 from CT states, and 4) via CT decay.

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