Heatmap from Scientific Research

Plot of ideal PCE as a function of contact resistivity ρ c and recombination current density J 0 for different HSCs, assuming a 110-μm-thick undoped c-Si bulk and J sc of 43.31 mA cm − 2 per Richter’s limiting efficiency model. Blue lines (with blue numbers) represent the selectivity S 10 according to ref. 53 , while dashed–dotted lines (with black numbers) are the contour lines for ideal PCE. Several typical HSCs, including p-a-Si:H (this work; red circle), p-nc-Si:H (this work; red star), p-SiC x :H (ref. 7 ; yellow circle) and p-poly-Si:H (refs. 55 , 56 ; purple circle) are marked for comparison.

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