Line Plot from Scientific Research

Measured transfer characteristics of 100 back-gated MoS 2 transistors fabricated in a 5 x 5 mm region at the centre of a 200-mm-diameter, 20-nm-thick alumina/silicon (Al 2 O 3 /Si) wafer (V DS = 0.7 V, L CH = 200 nm). I D, drain current; V GS, gate-source voltage; V DS, drain-source voltage; L CH, channel length.

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