Illustration from Scientific Research

Schematic illustration of the MOCVD system and the deposition process. Precursors are injected from the left side of the reaction chamber. The molybdenum precursor starts to decompose on reaching the left side of Region I (250 C). The sulfur precursor decomposes in Region II (>550 C) and flows back into Region I where it reacts with the decomposed molybdenum precursor to deposit MoS 2 on the target wafer. The residue gases are pumped out on the right side of the reaction chamber. A thermal block is placed in Region II to limit the gas flow.

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