Line Plot from Scientific Research

Open access visualization of Line Plot, Top-gate MoS 2 FET, Al 2 O 3 Dielectric, Transfer Characteristic, Hysteresis
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DOI: 10.1038/s41467-023-37887-x

DOI

The double-sweep transfer characteristic of a top-gate MoS 2 FET fabricated by transferred Al 2 O 3 as the top-gate dielectric, demonstrating small hysteresis value of 10 mV (inset).

#Line Plot#Top-gate MoS 2 FET#Al 2 O 3 Dielectric#Transfer Characteristic#Hysteresis

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