Line Plot from Scientific Research

ImpliedVOCs for transparent passivating contact solar cells, in which a passivating hydrogenated nc-SiC:H(n) seed layer is added between the interfacial SiOX and gradient layer. The inlet in (A) shows the modified sample structure. The dashed lines are guides to the eye. The errors in (A) are based on 10 initially prepared samples, with symmetric TPC structures on both sides. The error bars are the standard deviation of these samples, showing the nc-SiC:H(n)-based process fluctuations. These are used as limit for process reproducibility and given as error bars.

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