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Open access visualization of Illustration, Chemical Structure, Hall Bar Device, SrRuO3, Ferroelastic Writing
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Schematic of the Hall bar device of SrRuO 3 (001). After ferroelastic writing by an AFM tip, the anomalous Hall resistivity AHE was measured for a range of directions. zx and yz indicate the rotation angle of the applied B field on the zx and yz planes, respectively.

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