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The two-part interface design presented in this work. The interface consists of an electron-donating layer (green) and a passivation layer (yellow). The latter passivates silicon surface defects. We propose a sequential charge-transfer mechanism: (1) the donor supports an initial electron transfer to silicon, forming D+-ASi(light blue oval), followed by (2) a hole transfer from the donor to silicon, ultimately resulting in triplet energy transfer to silicon.

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