Illustration from Scientific Research

A local thermal gradient is created at the interface of a MATBG p–n junction using a focused laser beam. The gate-defined step in μ enables the generation of VPTE across the junction. VTG1 and VTG2, top-gate voltages; hBN, hexagonal boron nitride. Insets: origin of VPTE (left; x 0 denotes the junction position), an optical micrograph of the sample (middle) and a schematic cross-section of the heterostructure (right; VBG, back-gate voltage; VSD, source–drain voltage for the transport measurements; w, junction width; G, few-layer graphite used as top and back gates.).

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