Illustration from Scientific Research
CC-BY
1
Views
0
Likes
Citation
Simplified equivalent circuit of an n-channel MOSFET with parasitic substrate components. I B is the impact-ionization current component. R B and R D are the bulk and drain spreading resistances, respectively. V S is the source voltage.
#Illustration#MOSFET#Equivalent Circuit#Parasitic Components#Impact Ionization#Spreading Resistance#Source Voltage
Related Plots
Browse by Category
Popular Collections
Related Tags
Discover More Scientific Plots
Browse thousands of high-quality scientific visualizations from open-access research