Line Plot from Scientific Research

I D – V D characteristics of the MOSFET device depicted in d under different V G2 (bulk bias control voltage) for a neuron. Different hysteretic behaviours are visible, from a typical thresholding neuron to the synaptic plasticity regime. In all cases, V G was varied between 0.25 and 0.45 V in 0.05 V steps.

DOI