False-colour transmission electron microscope image of a co-fabricated device showing the cross-section along the fin. The qubits (Q1, Q2) are located underneath the plunger gates (P1, P2) and are manipulated by applying microwaves to the P1-gate. The barrier gate (B) controls the interdot tunnelling; the lead gates (L1, L2) accumulate the hole reservoirs. Measurements are performed on a device with ≃ 20 nm-wide B- and P-gates.
