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Open access visualization of Illustration, Workflow, Device, MoSe 2, hBN Layers
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Schematic of the device. 2H-stacked natural bilayer of MoSe 2 encapsulated by insulating bottom and top hBN layers. Few layer graphene (FLG) serve as the bottom (BG) and top (TG) gates, respectively, forming a capacitor-like structure. Two additional FLG flakes physically touch the MoSe 2 bilayer for grounding purposes (Gr. FLG (1)/(2)). The effect of an applied out of plane electric field ( E z ) indicated by the arrows) is shown on the intralayer exciton (X), and the interlayer excitons with opposite dipole moments (IX and IX').

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